Reactive Ion Etcher RIE 2000 CE from South Bay Technology Inc.

The RIE 2000 Reactive Ion Etcher allows anisotropic etching of several materials. It is a turbo pumped system capable of reaching a base pressure of less than 10-6 Torr. This low base pressure provides a clean etching environment and highly anisotropic etching without undercutting by eliminating residual species within the chamber prior to starting the etching process. Nowadays, the RIE 2000 is equipped with oxygen (O₂), argon (Ar) and tetrafluoromethane (CF₄) gases together with mixtures of oxygen/tetrafluoromethane (O₂/CF₄) gases.